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| MMBTSC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups R, O, and Y, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 12 V, IC = 2 mA Current Gain Group R O Y Symbol hFE hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Cob Cc,rbb' Gpe Min. 40 70 120 100 1.4 10 27 Typ. 2 29 Max. 80 140 240 0.1 0.1 0.4 1 400 3.2 50 33 Unit A A V V MHz pF ps dB Symbol VCBO VCEO VEBO IC -IE Ptot Tj TS Value 35 30 4 50 50 200 125 -55 to +125 Unit V V V mA mA mW O C C O Collector Cutoff Current at VCB = 35 V Emitter Cutoff Current at VEB = 4 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Transition Frequency at VCE = 10 V, IC = 1 mA Collector Output Capacitance at VCB = 10 V, f = 1 MHz Collector Base Time Constant at VCE = 10 V, -IE = 1 mA, f = 30 MHz Power Gain at VCC = 6 V, f = 10.7 MHz, -IE = 1 mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 06/05/2006 MMBTSC380 10 Ic[mA], COLLECTOR CURRENT I B=90 A I B=80 A h FE, DC CURRENT GAIN 1000 VCE=12V 8 6 4 2 0 0 2 4 6 I B=70 A I B=60 A I B=50 A I B=40 A I B=30 A I B=20 A I B=10 A 100 8 10 10 0.1 1 10 100 I C[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic VBE(sat) , VCE(sat) [ V ] , SATURATION VOLTAGE Figure 2. DC Current Gain 10 Ic=10I B Ic[mA], COLLECTOR CURRENT 32 28 24 20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VCE=12V 1 VBE(sat) 0.1 VCE(sat) 0.01 0.1 1 10 Ic[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Satruation Voltage Figure 4. Base-Emitter On Voltage fT [ MHz ] , CURRENT GAIN BANDWIDTH PRODUCT 10 Cob [ pF ] , CAPACITANCE 1000 VCE=10V f=1MHz I E=0 1 100 0.1 1 10 100 VCB[V], COLLECTOR BASE VOLTAGE 10 1 10 I C[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 06/05/2006 |
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